semihow rev.a0,april 2006 HFD1N80 / hfu1n80 bv dss = 800 v r ds(on) typ = 13 i d = 1.0 a thermal resistance characteristics features absolute maximum ratings t c =25 unless otherwise specified HFD1N80 / hfu1n80 800v n - channel mosfet symbol parameter value units v dss drain - source voltage 800 v i d drain current ? continuous (t c = 25 ) 1.0 a drain current ? continuous (t c = 100 ) 0.63 a i dm drain current ? pulsed (note 1) 4.0 a v gs gate - source voltage 30 v e as single pulsed avalanche energy (note 2) 90 mj i ar avalanche current (note 1) 1.0 a e ar repetitive avalanche energy (note 1) 4.5 mj dv/dt peak diode recovery dv/dt (note 3) 4.0 v/ns p d power dissipation (t a = 25 ) * 2.5 w power dissipation (t c = 25 ) - derate above 25 45 w 0.36 w/ t j , t stg operating and storage temperature range - 55 to +150 t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 symbol parameter typ. max. units r jc junction -to - case -- 2.78 /w r ja junction -to - ambient* -- 50 r ja junction -to - ambient -- 110 april 2006 * when mounted on the minimum pad size recommended (pcb mount) d - pak 1.gate 2. drain 3. source i - pak HFD1N80 hfu1n80 3 g d s 2 1 2 3 1 3 ? originative new design ? superior avalanche rugged technology ? robust gate oxide technology ? very low intrinsic capacitances ? excellent switching characteristics ? unrivalled gate charge : 7.5 nc (typ.) ? extended safe operating area ? lower r ds(on) : 13 (typ.) @v gs =10v ? 100% avalanche tested
semihow rev.a0,april 2006 HFD1N80 / hfu1n80 notes ; 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=170mh, i as =1.0a, v dd =50v, r g =25 ? , starting t j =25 c 3. i sd 1.0a, di/dt200a/s, v dd bv dss , starting t j =25 c 4. pulse test : pulse width 300s, duty cycle 2% 5. essentially independent of operating temperature electrical characteristics t c =25 c unless otherwise specified i s continuous source - drain diode forward current -- -- 1.0 a i sm pulsed source - drain diode forward current -- -- 4.0 v sd source - drain diode forward voltage i s = 1.0 a, v gs = 0 v -- -- 1.4 v trr reverse recovery time i s = 1.0 a, v gs = 0 v di f /dt = 100 a/s (note 4) -- 310 -- ? qrr reverse recovery charge -- 0.8 -- c symbol parameter test conditions min typ max units v gs gate threshold voltage v ds = v gs , i d = 250 ? 2.5 -- 4.5 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 0.5 a -- 13 16 ? on characteristics bv dss drain - source breakdown voltage v gs = 0 v, i d = 250 ? 800 -- -- v bv dss / t j breakdown voltage temperature coefficient i d = 250 ? , referenced to25 -- 1.0 -- v/ i dss zero gate voltage drain current v ds = 800 v, v gs = 0 v -- -- 1 ? v ds = 640 v, t c = 125 -- -- 10 ? i gssf gate - body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 ? i gssr gate - body leakage current, reverse v gs = - 30 v, v ds = 0 v -- -- -100 ? off characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 150 195 ? c oss output capacitance -- 20 26 ? c rss reverse transfer capacitance -- 5.5 7.2 ? dynamic characteristics t d(on) turn - on time v ds = 400 v, i d = 1.0 a, r g = 25 ? (note 4,5) -- 12 30 ? t r turn - on rise time -- 40 90 ? t d(off) turn - off delay time -- 25 60 ? t f turn - off fall time -- 45 100 ? q g total gate charge v ds = 640 v, i d = 1.0 a, v gs = 10 v (note 4,5) -- 7.5 10.0 nc q gs gate - source charge -- 1.2 -- nc q gd gate - drain charge -- 4.5 -- nc switching characteristics source - drain diode maximum ratings and characteristics
semihow rev.a0,april 2006 HFD1N80 / hfu1n80 i dr , reverse drain current [a] v sd , source - drain voltage [v] i d , drain current [a] v gs , gate - source voltage [v] i d , drain current [a] v ds , drain - source voltage [v] typical characteristics 10 -1 10 0 10 1 0 50 100 150 200 250 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd n ote ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 0 1 2 3 4 5 6 7 8 0 2 4 6 8 10 12 v ds = 400v v ds = 160v v ds = 640v n otes : i d = 1.0 a v gs , gate-source voltage [v] q g , total gate charge [nc] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 10 15 20 25 30 35 40 n ote : t j = 25 v gs = 20v v gs = 10v r ds(on) , [ ? ] drain-source on-resistance i d , drain current [a] figure 1. on region characteristics figure 2. transfer characteristics figure 3. on resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics
semihow rev.a0,april 2006 HFD1N80 / hfu1n80 typical characteristics (continued) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 0 n otes : 1. z jc (t) = 2.78 /w m a x . 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square wave pulse duration [sec] t 2 t 1 p dm -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 n otes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 i d , drain current [a] t c , case temperature [ o c] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 100 s dc 10 ms 1 ms operation in this area is limited by r ds(on) n otes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] figure 7. breakdown voltage variation vs temperature figure 8. on - resistance variation vs temperature figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1. v gs = 10 v 2. i d = 0.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c]
semihow rev.a0,april 2006 HFD1N80 / hfu1n80 fig 12. gate charge test circuit & waveform fig 13. resistive switching test circuit & waveforms fig 14. unclamped inductive switching test circuit & waveforms e as = l l i as 2 ---- 2 1 -------------------- bv dss -- v dd bv dss v in v ds 10% 90% t d(on) t r t on t off t d(off) t f charge v gs 10v q g q gs q gd v dd v ds bv dss t p v dd i as v ds (t) i d (t) time v dd ( 0.5 rated v ds ) 10v v ds r l dut r g 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut 10v dut r g l i d
semihow rev.a0,april 2006 HFD1N80 / hfu1n80 fig 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ? i s controlled by pulse period v dd l i s 10v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward voltage drop v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period --------------------------
semihow rev.a0,april 2006 HFD1N80 / hfu1n80 package dimension 5.35 0.15 6.6 0.2 5.6 0.2 0.6 0.2 0.8 0.2 2.3typ 2.3typ 2.7 0.3 9.7 +0.5 -0.3 0.05 +0.1 -0.05 0.5 +0.1 -0.05 0.5 0.05 2.3 0.1 1.2 0.3 1.2 0.3 1 0.2 to - 252
semihow rev.a0,april 2006 HFD1N80 / hfu1n80 package dimension 5.35 0.15 6.6 0.2 0.75 0.15 2.3typ 2.3typ 5.6 0.2 7 0.2 7.5 0.3 0.6 0.1 2.3 0.1 0.5 0.05 1.2 0.3 0.5 +0.1 -0.05 0.8 0.15 to - 251
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